Technology developed to improve thermal management in power semiconductors for space applications. Here are the key aspects of this technology:
Need for better heat dissipation
As GaN (Gallium Nitride) and SiC (Silicon Carbide) transistors evolve, there’s a need for packages with better performance and higher heat dissipation capability. For the space sector, it’s necessary to develop a European version of components that can dissipate thermal energy faster.
Project goal
The project aimed to create a European supply chain for heatsink materials, packages, and mounting solutions for GaN, compatible with space. The objective was to demonstrate the operation of a new GaN-based High Power Amplifier (HPA) using high-performance packages made of diamond composite material.
Key achievements
- Modification of copper-diamond composite material with required thermal properties.
- Improvement of material finishing and incorporation into a hermetic RF package.
- Integration with a GaN power transistor and sealing package.
- Conducting tests to demonstrate mechanical and electrical properties of the package.
Benefits
This technology will significantly improve the maximum performance of power transistors compared to traditional silicon power transistors. It’s particularly valuable in projects requiring high-power transistors.
Future plans
The next step is to reduce the cost of the packaging technology.
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